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Numerical study of transient characteristics of field effect transistors based on graphene nanoribbons

Number of pages: 68 File Format: word File Code: 32279
Year: 2014 University Degree: Master's degree Category: Electronic Engineering
Tags/Keywords: Field effect transistors - Graphene - Graphene nanoribbons - Green's function - Transistor - Transistor
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  • Summary of Numerical study of transient characteristics of field effect transistors based on graphene nanoribbons

    Academic thesis for obtaining a master's degree

    Electronics major

    Abstract

    In this thesis, the introduction of graphene, its manufacturing method, its advantages and applications in field effect transistors and the conducted research and will be investigated, then we will have an overview of the structure of field effect transistors based on graphene nanostrips and the methods of simulating field effect transistors based on graphene nanostrips will be introduced and calculation and simulation formulas based on non-equilibrium Green's function will be introduced. In the following, the effective parameters on the transient characteristics of field-effect transistors based on graphene nanostrips, the presentation and results of simulations based on the non-equilibrium Green's function for MOSFET graphene nanostrip field-effect transistors are drawn. Finally, the effects of changing the structure on the characteristic curves of field-effect transistors based on graphene nanostrips are evaluated by the non-equilibrium Green's function method with the aim of investigating the change of parameters affecting the transient response.

    Introduction

    In 1961, scientists predicted that no transistor in A chip cannot be smaller than 10 millionths of a meter [1]. While later modern Intel Pentium chips became 200 times smaller than that. Researchers are currently working on innovative ways to make smaller devices. In particular, several nanoelectronic devices such as carbon nanotube field effect transistors [1-3], silicon nanowire field effect transistors [1-3], and planar compound semiconductors [3-5] are emerging.  All of them are proposed as potential candidates for integration on integrated silicon platform to increase circuit performance and also to extend Moore's law [1]. With the extreme miniaturization of the field effect transistor, new challenges arise, for example, one of the challenges is significant effects such as the adverse effects of the short channel, decreasing the switching speed, increasing the leakage current, and as a result, increasing the power consumption in the applied circuits. These reasons led to the search for new devices or materials that are able to continue the miniaturization of transistors according to Moore's law. One of the suitable options for the channel in future transistors can be based on graphene. The use of graphene [1] as a set of nano-ribbons as a basis for field effect transistors [2] has attracted special attention for some time. This material is a new class of materials in the carbon family, which is promising for the development of nanoelectronic devices. [2,3] Graphene is the name of one of the allotropes of carbon and is a two-dimensional (2D) network of carbon atoms that are connected in a hexagonal configuration of atoms with SP2 hybrid. In graphite (another allotrope of carbon), each of the tetravalent carbon atoms is connected to three other carbon atoms with three covalent bonds and forms an extensive network. This layer itself is placed on a completely similar layer, and in this way, the fourth valence electron has also given a chemical bond, but the bond of this fourth electron is of the van der Waals bond type, which is a weak bond. For this reason, graphite layers easily slide on top of each other. Graphene is a material in which there is only one of these graphite layers, and in other words, the fourth bonded electron of carbon remains as a free electron. In a graphene sheet, each carbon atom is bonded to 3 other carbon atoms.  These three links are on the same plane and the angles between them are equal to 120°. In this case, the carbon atoms are placed in a position that creates a network of regular hexagons. Of course, this is the most ideal state of a graphene sheet. In some cases, the shape of this plane changes in such a way that pentagons and heptagons are also created. Carbon carbon bond length in graphene is about 0.142 nm.

    The discovery of graphene, which is a one-atom-thick sheet of carbon atoms arranged in a honeycomb network, led to prominent physicists Andre K..

        The discovery of graphene, which is a one-atom-thick sheet of carbon atoms arranged in a honeycomb network, led prominent physicists Andre K. Jim and Constantin Novelso[3], both from the University of Manchester in England, to win the Nobel Prize in Physics in 2010. When carbon nanotubes and hub balls were discovered, the idea that an "independent" sheet of graphene, a carbon film with a thickness of one atom that is fixed or in a suspended state that is not tightly connected, could be separated since 1980 [1], but after years of unsuccessful attempts to separate graphite into its constituent graphene sheets, researchers had concluded in the beginning of this decade that independent graphene cannot be separated. The principles of thermodynamics predicted that materials would self-assemble into nanotubes or other curved structures. However, in 2004, Andre K. Gimme and Constantin Novelso were working on a surprisingly simple method for exfoliating a small chip of graphite, obtained by repeatedly sticking adhesive tape against the crystal and tearing apart the graphene tape. Their team showed that not only can the graphene sheet be separated, but it remains stable, especially at room temperature. The discovery of this rudimentary method for separating graphene sheets led to an explosion in graphene research.  These materials quickly became a top choice for advanced computer applications [2,3], digital displays [2,3] and other types of flexible electronic circuits [1-3] and advanced composite materials. The possibility of using graphene in applications in a similar way to carbon nanotubes has been proposed.

    The reason that graphene nanoribbons are very suitable for the future of digital electronic applications is not only because of their small size, but also their potential characteristics, especially electronic and thermal properties [6]. One of the properties of graphene nanoribbon is that its carrier transport is one-dimensional. This type of transmission can inhibit the dispersion effect [4] and at the same time it can cause ballistic transmission. As a result, the power loss of the graphene nano ribbon is very low. Then we will review the structure of different types of graphene nano ribbon field-effect transistors and will be introduced calculation formula and simulation of GNRFET's based on non-equilibrium Green's function. In the next section, the affecting parameters of the transient characteristics of GNRFET's are presented and simulation results based on NEGF for the MOS like GNRFET's drawn. Finally, evaluated effects of changing structure of characteristic curve of the GNRFET's based on NEGF by purpose the change of parameters that influence the transient response.

  • Contents & References of Numerical study of transient characteristics of field effect transistors based on graphene nanoribbons

    List:

    List: 3

    List of tables 5

    Abstract. 8

    The first chapter. 10

    Introduction. 10

    The second chapter. 17

    2-1- Introduction of graphene nano tape. 17

    2-1-1- Graphene production methods: 24

    2-1-1-1- E-beam lithography. 24

    2-1-1-2- Micromechanical scaling method: 25

    2-1-1-3- Interwoven growth method: 26

    2-1-1-4- Vapor deposition method Chemical(CVD) : 26

    Source:

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Numerical study of transient characteristics of field effect transistors based on graphene nanoribbons
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