Contents & References of Control of a single-phase inverter in grid-connected distributed generation system
List:
Abstract .. 1
Objective .. 2
Chapter One - Introduction: Familiarity with image sensors and their power consumption. 3
1-1) Imaging sensors and their application in the field of medical nano cameras. 5
1-2) familiarity with Charge-Coupled Devices (CCD). 5
1-3) Acquaintance with (Complementary Metal Oxide Semiconductor) CMOS. 7
1-4) Structure of CCD and CMOS sensors. 8
1-5) Advantages and disadvantages and overall comparison of CCD and CMOS. 11
Chapter Two – Importance of reducing power consumption. 12
1-2) Power consumption..12
2-2) Power consumption optimization. Reducing power consumption in integrated circuits. 17
3-1) Operational amplifier. 17
3-2) Importance of power in integrated circuits. 19
3-3) Power consumption in electronic circuits. 19
3-4) Techniques for reducing power consumption. 20
3-5) Designing VLSI circuits with low power consumption. 21
3-6) Technology 22.22 Adiabatic Circuits 3-6-1) 23 Short Circuit 3-6-2 24 Reducing Glitches 3-6-3 26 Standby Mode Leakage Suppression 3-6-4
.27 Variable Body Biasing 3-6-4-2)
.28 Sleep Transistors 3-6-5)
.29Dynamic Threshold MOS(DTMOS)3-6-6)
.30 Short Circuit Power Suppression3-6-7)
Chapter Four – Presentation and simulation of the proposed circuit.32
4-1) Circuit components..33
4-2) circuit schematic..34
..35ABCC4-3)
4-3-1) current monitoring circuit.35
4-3-2) current comparison circuit.36
4-3-3) current amplification circuit.37
4-4) circuit measurement scales.41
Speed ????of output changes (Slew) Rate). 41
4-4-2) amplifier gain. 42
4-4-3) phase margin.. 43
4-5) simulation and analysis of the amplifier circuit with ABCC block. 45
SR circuit. Circuit. 49
-9) Simulation and analysis of amplifier circuit without ABCC block. 51
Conclusion. Nano. 61
B-3 netlist related to ABCC blockless amplifier circuit in 180 nano technology. 63
B-4 Netlist related to ABCC blockless amplifier circuit in 90 nanotechnology. 68
List of references.
Source:
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[2] M. Degrauwe, et al., "Adaptive biasing CMOS amplifiers," IEEE Journal of Solid-State Circuits, vol. 17, pp. 522-528, 1982. [3] K. Ueno, et al., “A 300-nW, 15-ppm/°C, 20-ppm/V CMOS voltage reference circuit consisting of subthreshold MOSFETs,” IEEE Journal of Solid-State Circuits, vol. 44, no. 7, pp. 2047-2054, 2009. [4] T. Hirose, et al., "A nano-ampere current reference circuit and its temperature dependence control by using temperature characteristics of carrier mobilities," Proceedings of the 36th European Solid-State Circuits Conference, pp. 114-117, 2010.
[5] T. Hirose, et al., “A CMOS bandgap and sub-bandgap voltage reference circuits for nanowatt power LSIs,” IEEE Asian Solid-State Circuits Conference, pp. 77-80, 2010. [6] M.-T. Chung and C.-C. Hsieh, “A 0.5V 4.95?W 11.8fps PWM CMOS Imager with 82dB Dynamic Range and 0.055% Fixed-Pattern Noise,” ISSCC Dig Tech. Papers, pp. 114-114, Feb. 2012.
[7] S. Chen, W. Tang, X. Zhang, and E. Culurciello, “A 64×64 Pixels UWB Wireless Temporal-Difference Digital Image Sensor,” IEEE Trans. VLSI, vol. 20, no. 12, pp. 2232-2240, Dec. 2012.
[8] U. Mallik, M. Clapp, G. Cauwenberghs, and R. Etienne-Cummings, “Temporal Change Threshold Detection Imager,” ISSCC Dig Tech. Papers, pp. 362-363, Feb. 2005.
[9] N. Massari, M. Gottardi, and S. Jawed, “A 100?W 64×128-Pixel Contrast-Based Asynchronous Binary Vision Sensor for Wireless Sensor Networks,” ISSCC Dig Tech. Papers, pp. 588-589, 638, Feb. 2008.
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